TPD1008SA Ver la hoja de datos (PDF) - Toshiba
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TPD1008SA Datasheet PDF : 11 Pages
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TPD1008SA
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source Voltage
VDS
60
V
Supply Voltage
DC
Pulse
VDD (1)
25
V
VDD (2)
60 (Rs = 1Ω, τ = 250ms)
V
Input Voltage
DC
Pulse
VIN (1)
−0.5~12
V
VIN (2)
VDD (1) + 1.5 (t = 100ms)
V
Diagnosis Output Voltage
VDIAG
−0.5~25
V
Output Current
IO
Internally Limited
A
Input Current
IIN
±10
mA
Diagnosis Output Current
IDIAG
5
mA
Tc = 25°C
PD (1)
30
W
Power Dissipation
Ta = 25°C
PD (2)
2
W
Operating Temperature
Topr
−40~110
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55~150
°C
Lead Temperature/Time
TSOL
275 (5s), 260 (10s)
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (TC = −40~110°C, VDD = 8~18V)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Operating Supply Voltage
Supply Current
Input Voltage
Input Current
On Voltage
On Resistance
Output Leakage Current
Diagnosis Output
Voltage
“L” Level
Diagnosis Output
Current
“H” Level
VDD (opr)
IDD
VIH
VIL
IIN (1)
IIN (2)
VDS (ON)
RDS (ON)
IOL
VDL
IDH
―
―
5
― VDD = 12V, VIN = 0V
―
― VDD = 12V, IO = 2A
3.5
― VDD = 12V, IO = 1.2mA
―
VDD = 12V, VIN = 5V
―
VDD = 12V, VIN = 0V
―
−0.2
― VDD = 12V, IO = 2A, TC = 25°C ―
― VDD = 12V, IO = 2A, TC = 25°C ―
― VDD = 18V, VIN = 0V
―
― VDD = 12V, IDL = 2mA
―
― VDD = 18V, VDH = 18V
―
Overcurrent Protection
IS (1) (Note 1) 1
4
VDD = 12V, TC = 25°C
IS (2) (Note 2) 2
4
Temperature
TS
―
150
Thermal Shutdown
―
Hysteresis
ΔTS
―
―
Open Detection Resistance
Rops
― VDD = 8V
1
Switching Time
tON
tOFF
3
VDD = 12V, RL = 5Ω
TC = 25°C
10
10
Note 1: Overcurrent detection value when load is short-circuited and VIN = “L” → “H”
Note 2: Overcurrent detection value when load current is increased while VIN = “H”
4
Typ. Max Unit
12
18
V
1
5
mA
―
―
V
―
1.5
V
50 200 μA
―
0.2
μA
―
0.4
V
―
0.2
Ω
―
1.2 mA
―
0.4
V
―
10
μA
6
8
A
8
12
A
160 200 °C
10
―
°C
20 100 kΩ
100 ―
μs
30
―
μs
2006-10-31
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