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Número de pieza
componentes Descripción
TPD1024S(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TPD1024S
(Rev.:2002)
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TPD1024S Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS (DC)
40
V
Output current
I
D
1.5
A
Input voltage
V
GS
−
0.5 ~ 6
V
Ta = 25°C
Power dissipation
P
D
Tc = 25°C
1
W
10
Operating temperature
Junction temperature
Storage temperature
T
opr
−
40 ~ 85
°C
T
j
150
°C
T
stg
−
55 ~ 150
°C
Recommendable Condition
Characteristic
Input voltage
Symbol
V
IN
Test Condition
―
Electrical Characteristics
(T
j
= 25°C)
Characteristic
Drain-source breakdown voltage
Operating supply voltage
Current at output off
Input threshold voltage
Input current
On resistance
Thermal shutdown temperature
Overcurrent protection
Switching time
Diode forward voltage
Between drain and source
Avalanche energy
Symbol
V
(BR) DSS
V
DD (OPR)
I
DSS (1)
I
DSS (2)
V
th
I
GSS
R
DS (ON)
T
S
I
S
t
ON
t
OFF
V
DSF
E
A
Test
Cir-
Test Condition
cuit
―
V
GS
= 0, I
D
= 10 mA
―
―
―
V
GS
= 0, V
DS
= 40 V
―
V
GS
= 0, V
DS
= 24 V
―
V
DS
= 10 V, I
D
= 1 mA
―
V
GS
= 5 V,
at normal operation
―
V
GS
= 5 V, I
D
= 1 A
―
―
―
V
DS
= 12 V, V
GS
= 5 V
1
V
DS
= 12 V, V
GS
= 5 V,
R
L
= 12
Ω
―
I
F
= 1.5 A
―
L = 10 mH, Single pulse
Test Circuit 1
TPD1024S
Min Typ. Max Unit
4.5
5
6
V
Min Typ. Max Unit
40
―
―
V
―
―
18
V
―
―
3
mA
―
―
100
µA
0.8
―
2.5
V
―
―
300
µA
―
―
0.5
Ω
―
160
―
°C
―
3.5
―
A
―
50
―
µs
―
10
―
µs
―
0.9 1.8
V
30
―
―
mJ
3
2002-10-24
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