IDT6198S85D Ver la hoja de datos (PDF) - Integrated Device Technology
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IDT6198S85D Datasheet PDF : 8 Pages
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IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)
PIN CONFIGURATIONS
A0
A1
A2
A3
A4
A5
A6
A7
A8
CS
OE
GND
1
24
2
23
3
22
4 D24-1 21
5
&
20
6 SO24-4 19
7
18
8
17
9
16
10
15
11
14
12
13
V CC
A 13
A 12
A 11
A 10
A9
NC
I/O 3
I/O 2
I/O 1
I/O 0
WE
DIP/SOJ
TOP VIEW
2987 drw 02
INDEX
3 2 28 27
A1 4
1
26 NC
A2 5
25 A13
A3 6
24 A12
A4 7
23 A11
A5 8 L28-2 22 A10
A6 9
21 A9
A7 10
A8 11
20 I/O3
19 I/O2
CS 12
18 I/O1
13 14 15 16 17
2987 drw 03
LCC
TOP VIEW
PIN DESCRIPTIONS
Name
Description
A0–A13
CS
WE
OE
Address Inputs
Chip Select
Write Enable
Output Enable
I/O0–I/O3
Data Input/Output
VCC
Power
GND
Ground
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE(1)
Mode CS WE OE
Standby
H
X
X
Read
L
H
L
Write
L
L
X
Read
L
H
H
NOTE:
1. H = VIH, L = VIL, X = Don't Care
I/O
High-Z
DATAOUT
DATAIN
High-Z
Power
Standby
Active
Active
Active
2987 tbl 02
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Com’l.
Mil.
Unit
VTERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V
with Respect
to GND
TA
Operating
0 to +70 –55 to +125 °C
Temperature
TBIAS
Temperature
Under Bias
–55 to +125 –65 to +135 °C
TSTG
Storage
Temperature
–55 to +125 –65 to +150 °C
PT
Power Dissipation 1.0
1.0
W
IOUT
DC Output
Current
50
50
mA
NOTE:
2987 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance
VIN = 0V
7 pF
CI/O
I/O Capacitance
VOUT = 0V
7 pF
NOTE:
2987 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
2987 tbl 01
6.3
2
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