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TPD1032F(2006) Ver la hoja de datos (PDF) - Toshiba

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TPD1032F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TPD1032F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
DC
Pulse
Drain current
Input voltage
Power dissipation
(Ta=25)(Note 3a)
Single-device operation (Note4a)
Single-device value at dual
operation (Note4b)
Power dissipation
(Ta=25)(Note 3b)
Single-device operation (Note4a)
Single-device value at dual
operation (Note4b)
Single pulse active clamp capability (Note 5)
Active clamp current
Repetitive active clamp capability
(Note 6)
Operating temperature
Channel temperature
Storage temperature
VDS
ID
VIN
PD(1)
PD(2)
PD(3)
PD(4)
EAS
IAR
EAR
Topr
Tch
Tstg
20
V
40
Internally limited
A
0.3 to 7
V
0.95
0.54
W
0.38
0.20
90
mJ
3
A
54
μJ
40 to 110
°C
150
°C
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance,
Single-device operation
channel (Note 4a)
Rth (ch-a)(1)
132
to ambient
(Note3a) Single-device value at
dual operation (Note 4b)
Rth (ch-a)(2)
231
Thermal resistance,
Single-device operation
channel (Note 4a)
Rth (ch-a)(1)
330
to ambient
(Note3b) Single-device value at
dual operation (Note 4b)
Rth (ch-a)(2)
625
Note 3:
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Unit
°C/W
°C/W
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
a) Device mounted on a glass-epoxy board (a)
(b)
b) Device mounted on a glass-epoxy board (b)
4
2006-10-31

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