TPD1032F(2006) Ver la hoja de datos (PDF) - Toshiba

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TPD1032F
(Rev.:2006)

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

Toshiba 

TPD1032F

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1032F

2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive

The TPD1032F is a 2-IN-1 low-side switch.

The IC has a vertical MOSFET output which can be directly

driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC

is equipped with intelligent self-protection functions.

Features

• Two built-in power IC chips with a new structure combining a

control block and a vertical power MOSFET (L2-π-MOS) on

each chip.

• Can directly drive a power load from a CMOS or TTL logic.

Weight: 0.08 g (typ.)

• Built-in protection circuits against overvoltage (active clamp),

overtemperature (thermal shutdown), and overcurrent (current limiter).

• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)

• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)

• Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40～110°C)

• 8-pin SOP package for surface with embossed-tape packing.

Pin Assignment (top view)

SOURCE1 1

8 DRAIN1

IN1 2

7 DRAIN1

SOURCE2 3

6 DRAIN2

IN2 4

5 DRAIN2

Note1: Due to its MOS structure, this product is sensitive to static electricity.

Marking

TPD1032

F

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

1

2006-10-31

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