TPC8129 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TPC8129 Datasheet PDF : 9 Pages
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6. Electrical Characteristics (Ta = 25 unless otherwise specified)
6.1. Static Characteristics
TPC8129
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
IDSS VDS = -30 V, VGS = 0 V
-10
Drain-source breakdown voltage
V(BR)DSS ID = -10 mA, VGS = 0 V
-30
V
Drain-source breakdown voltage (Note 5) V(BR)DSX ID = -10 mA, VGS = 10 V
Gate threshold voltage
Vth
VDS = -10 V, ID = -0.2 mA
-21
-0.8
-2.0
Drain-source on-resistance
RDS(ON)
VGS = -4.5 V, ID = -4.5 A
VGS = -10 V, ID = -4.5 A
22
28
mΩ
17
22
Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = -10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
1650
pF
260
300
8
ns
16
42
140
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD ≈ -24 V, VGS = -10 V, ID = -9 A
Qgs1
Qgd
6.4. Source-Drain Characteristics
Characteristics
Symbol
Test Condition
Pulsed reverse drain current
(Note 6)
IDRP
Diode forward voltage
VDSF IDR = -9 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
39
nC
4
10
Min Typ. Max Unit
-36
A
1.2
V
3
2010-08-25
Rev.1.0
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