TPC8129 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TPC8129

Silicon P-Channel MOS (U-MOS VI) MOSFETs

Toshiba 

5. Thermal Characteristics

Characteristics

Channel-to-ambient thermal resistance

(t = 10 s)

(Note 2)

Channel-to-ambient thermal resistance

(t = 10 s)

(Note 3)

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 4: VDD = -24 V, Tch = 25 (initial), L = 0.2 mH, RG = 25 Ω, IAR = -9 A

TPC8129

Symbol

Rth(ch-a)

Rth(ch-a)

Max

Unit

65.7

/W

125

/W

Fig. 5.1 Device Mounted on a Glass-Epoxy

Board (a)

Fig. 5.2 Device Mounted on a Glass-Epoxy

Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2010-08-25

Rev.1.0

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