TPC8129 Ver la hoja de datos (PDF) - Toshiba
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TPC8129 Datasheet PDF : 9 Pages
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MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8129
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)
(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
TPC8129
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
V
Gate-source voltage
VGSS
-25/+20
Drain current (DC)
(Note 1)
ID
-9
A
Drain current (pulsed)
(Note 1)
IDP
-36
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9
W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.0
W
Single-pulse avalanche energy
(Note 4)
EAS
21
mJ
Avalanche current
Channel temperature
IAR
-9
A
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-25
Rev.1.0
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