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TPC8127

Silicon P Channel MOS Type (U-MOSⅥ) Field Effect Transistor

Toshiba 

TPC8127

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

TPC8127

Lithium Ion Battery Applications

Power Management Switch Applications

Unit: mm

• Small footprint due to small and thin package

• Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.)

• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)

• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

DC (Note 1)

Pulse (Note 1)

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

Avalanche current

(Note 1)

Channel temperature

Storage temperature range

VDSS

VDGR

VGSS

ID

IDP

PD

PD

EAS

IAR

Tch

Tstg

−30

V

−30

V

−25/+20

V

−13

A

−52

1.9

W

1.0

W

110

mJ

−13

A

150

°C

−55 to 150

°C

Note 1, Note 2, Note 3 : See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8765

1234

1

2009-11-20

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