TPC8125 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TPC8125 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
30
Common source
Pulse test
25
20
15
VGS = −4.5 V
10
ID = −2.5, −5, −10 A
ID = −2.5, −5, −10 A
VGS = −10 V
5
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8125
−100
IDR – VDS
−10 −4.5 −3
−10
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1
1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
Crss
−10
Drain−source voltage VDS (V)
−100
Vth – Ta
−2
−1.6
−1.2
−0.8
Common source
−0.4 VDS = −10 V
ID = −0.5mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.6
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t = 10 s
1.2
(2)
0.8
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−30
−25 VDD = −24 V
−30
Common source
ID = −10 A
Ta = 25°C
−25
Pulse test
−20
VDS
−20
−15
−12
−10
−6
−5
0
0
VGS
−15
−6
VDD = −24 V −10
−12
−5
20
40
60
80
Total gate charge Qg (nC)
0
100
5
2009-11-17
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