TPC8125 Ver la hoja de datos (PDF) - Toshiba

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TPC8125

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

Toshiba 

TPC8125

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut-OFF current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON-resistance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-ON time

Fall time

Turn-OFF time

Total gate charge

(gate-source plus gate-drain)

Gate-source charge 1

Gate-drain (“miller”) charge

Symbol

Test Condition

Min Typ. Max Unit

IGSS

VGS = ±20 V, VDS = 0 V

⎯

⎯ ±100 nA

IDSS

VDS = −30 V, VGS = 0 V

⎯

⎯

−10

μA

V (BR) DSS ID = −10 mA, VGS = 0 V

−30 ⎯

⎯

V

V (BR) DSX ID = −10 mA, VGS = 10 V (Note 6) −21

⎯

⎯

Vth

VDS = −10 V, ID = −0.5 mA

−0.8 ⎯

−2.0

V

RDS (ON)

VGS = −4.5 V, ID = −5 A

VGS = −10 V, ID = −5 A

⎯

13

17

mΩ

⎯

10

13

Ciss

⎯ 2580 ⎯

Crss

VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯

430

⎯

pF

Coss

⎯

490

⎯

tr

0V

VGS

−10 V

ton

tf

ID = −5 A

⎯

8

⎯

VOU

⎯

16

⎯

ns

⎯

75

⎯

VDD ≈ −15 V

toff

Duty ≤ 1%, tw = 10 μs

⎯

245

⎯

Qg

Qgs1

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −10 A

⎯

64

⎯

⎯

6

⎯

nC

⎯

17

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Drain reverse

current

Pulse

Forward voltage (diode)

(Note 1)

Symbol

Test Condition

IDRP

VDSF

⎯

IDR = −10 A, VGS = 0 V

Min Typ. Max Unit

⎯

⎯

−40

A

⎯

⎯

1.2

V

Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum

rating of drain-source voltage.

3

2009-11-17

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