TPC8119 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TPC8119 Datasheet PDF : 7 Pages
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TPC8119
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯ ±100 nA
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
μA
V (BR) DSS
V (BR) DSX
ID = −10 mA, VGS = 0 V
ID = −10 mA, VGS = 20 V
−30 ⎯
⎯
V
−13 ⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.8 ⎯
−2.0
V
RDS (ON)
VGS = −4 V, ID = −5 A
VGS = −10 V, ID = −5 A
⎯
20
28
mΩ
⎯
10
13
|Yfs|
VDS = −10 V, ID = −5 A
12
24
⎯
S
Ciss
⎯ 1560 ⎯
Crss
VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯
370
⎯
pF
Coss
⎯
475
⎯
tr
VGS 0 V
ton
−10 V
tf
⎯
8
⎯
ID = −5 A
VOUT
⎯
16
⎯
ns
⎯
55
⎯
VDD ≈ −15 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
145
⎯
Qg
Qgs1
Qgd
VDD ≈ −24 V, VGS = −10 V,
ID = −10 A
⎯
40
⎯
⎯
5
⎯
nC
⎯
13
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
⎯
IDR = −10 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
−40
A
⎯
⎯
1.2
V
3
2009-09-29
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