TPC8112 Ver la hoja de datos (PDF) - Toshiba

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TPC8112

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)

Toshiba 

Electrical Characteristics (Ta = 25°C)

TPC8112

Characteristics

Gate leakage current

Drain cut-OFF current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-ON time

Fall time

Turn-OFF time

Total gate charge

(gate-source plus gate-drain)

Gate-source charge 1

Gate-drain (“miller”) charge

Symbol

Test Condition

Min Typ. Max Unit

IGSS

VGS = ±16 V, VDS = 0 V

⎯

⎯ ±10 µA

IDSS

VDS = −30 V, VGS = 0 V

⎯

⎯ −10 µA

V (BR) DSS

V (BR) DSX

ID = −10 mA, VGS = 0 V

ID = −10 mA, VGS = 20 V

−30 ⎯

⎯

V

−15 ⎯

⎯

Vth

VDS = −10 V, ID = −1 mA

−0.8

⎯

−2.0

V

RDS (ON)

VGS = −4 V, ID = −6.5 A

VGS = −10 V, ID = −6.5 A

⎯

9.0

14

mΩ

⎯

5.0

6.0

|Yfs|

VDS = −10 V, ID = −6.5 A

15.5 31

⎯

S

Ciss

⎯ 5880 ⎯

Crss

VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1000 ⎯

pF

Coss

⎯ 1050 ⎯

tr

0V

VGS

−10 V

ton

ID = −6.5 A

⎯

11

⎯

VOUT

⎯

22

⎯

ns

tf

⎯ 110 ⎯

VDD ∼− −15 V

toff

Duty <= 1%, tw = 10 µs

⎯ 395 ⎯

Qg

Qgs1

Qgd

VDD ∼− −24 V, VGS = 10 V,

ID = −13 A

⎯ 130 ⎯

⎯

10

⎯

nC

⎯

30

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Drain reverse

current

Pulse

Forward voltage (diode)

(Note 1)

Symbol

Test Condition

IDRP

VDSF

⎯

IDR = −13 A, VGS = 0 V

Min Typ. Max Unit

⎯

⎯ −52

A

⎯

⎯

1.2

V

3

2006-11-15

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