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TP2510

Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs

Supertex Inc 

TP2510

Low Threshold

P-Channel Enhancement Mode

Vertical DMOS FETs

Features

► Low threshold — -2.4V max.

► High input impedance

► Low input capacitance — 125pF max.

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

► Complementary N and P-channel devices

Applications

► Logic level interfaces — ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

General Description

These low threshold enhancement-mode (normally-off) tran-

sistors utilize a vertical DMOS structure and Supertex’s well-

proven silicon-gate manufacturing process. This combination

produces devices with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefficient inherent in MOS devices. Characteristic

of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

widerange of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Switching Waveforms and Test Circuit

0V

INPUT

10%

-10V

t(ON)

90%

t(OFF)

td(ON)

tr

td(OFF)

tF

0V

OUTPUT

VDD

10%

90%

90%

10%

PULSE

GENERATOR

RGEN

INPUT

D.U.T.

Output

RL

VDD

Thermal Characteristics

Package

ID

continuous†

ID

pulsed

Power Dissipation

@ TA = 25OC

θjc

(OC/W)

θjc

(OC/W)

IDR†

(mA)

IDRM

(A)

(mA)

(A)

(W)

TO-243AA

-480

-2.5

† I (continuous) is limited by max rated T .

D

j

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

1.6‡

15

78‡

-480

-2.5

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