TN2101K1 Ver la hoja de datos (PDF) - Supertex Inc
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TN2101K1 Datasheet PDF : 4 Pages
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TN2101
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-236AB
0.17A
* ID (continuous) is limited by max rated Tj.
– OBSOLETE – 0.8A
0.36W
200
350
0.17A
0.8A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
15
VGS(th)
Gate Threshold Voltage
0.5
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
V
1.0
V
-5.5 mV/°C
100
nA
10
µA
1.0 mA
ID(ON)
RDS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
60
50
7.0
∆RDS(ON) Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
50
CISS
Input Capacitance
110
COSS
Common Source Output Capacitance
60
CRSS
Reverse Transfer Capacitance
35
td(ON)
Turn-ON Delay Time
5
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
15
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
100
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
Ω
%/°C
m
pF
ns
V
ns
ID = 1mA, VGS = 0V
VGS = VDS, ID = 1mA
ID = 1mA, VGS = VDS
VGS = ±15V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 3.0, VDS = 15V
VGS =1.2V, ID = 2.0mA
VGS = 3V, ID = 50mA
ID = 50mA, VGS = 3V
VDS = 3V, ID = 50mA
VGS = 0V, VDS = 15V, f = 1MHz
VDD = 15V
ID = 50mA
RGEN = 25Ω
ISD = 50mA, VGS = 0V
ISD = 50mA, VGS = 0V
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
7-68
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
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