TN805 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TN805 Datasheet PDF : 14 Pages
| |||
Characteristics
1
Characteristics
TN805, TN815, TS820, TYN608
Table 2. Absolute ratings (limiting values)
Value
Symbol
Parameter
TN805
Unit
TN815 TYN608
TS820
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak
on-state current
I2t value for fusing
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tc = 110 °C
T0-220FPAB, Tc = 91 °C
Tc = 110 °C
T0-220FPAB, Tc = 91 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Maximum peak reverse gate voltage (for TN8x5 and TYN608 only)
8
5
73
100
70
95
24.5
45
50
4
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A2S
A/µs
A
W
°C
V
Table 3.
Symbol
Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
TS820
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA ,, RGK = 1 kΩ
VD = 65% VDRM, RGK = 220 Ω
ITM = 16 A, tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM, RGK = 220 Ω
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/13
Doc ID 7476 Rev 7
Share Link: 