TN1215-600G Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TN1215-600G Datasheet PDF : 5 Pages
| |||
Fig. 1: Maximum average power dissipation ver-
sus average on-state current .
P(W)
14
12
10
8
6
4
2
0
0
D.C.
α=180°
α=120°
α=90°
α=60°
α=30°
IT(AV)(A)
2
4
6
8
10
12
Fig. 3: Average and D.C. on-state current versus
case temperature.
TN1215-G
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable tem-
peratures (Tamb and Tcase) for different thermal
resistances heatsink+contact.
P(W)
Tcase (°C)
14
12
Rth=8°C/W
10
Rth=5°C/W
Rth=3°C/W
Rth=0°C/W
110
8
115
6
4
120
2
α=180°
Tamb(°C)
0
125
0
20 40 60 80 100 120 140
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
IT(AV)(A)
14
12
10
8
6
4
2
0
0
D.C.
α=180°
Tcase( °C)
25
50
75
100
125
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature.
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj]/IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
1.0
IH
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
ITSM(A)
160
120
80
40
0
1
®
Tj initial=25°C
F=50Hz
Number of cycles
10
100
1000
3/5
Share Link: 