TM100 Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Fabricante
TM100 Datasheet PDF : 4 Pages
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PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 4
7 Tj=150°C
5
3
2
10 3
7
5
3
2
10 2
7
5
3
2
10 1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
4
3
2 VFGM=10V
10 1
7
5
VGT=3.0V
3
2
10 0
IGT=
100mA
7
5 Tj=25°C
PGM=5W
PFG(AV)=
0.50W
3
2
10 –1
VGD=0.25V
7
5
410 1 2 3 5 710 2 2 3 5 7 10 3 2 3 5 7 10 4
GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
100
(SINGLE PHASE HALFWAVE)
120°
90° 180°
80
60°
60
θ=30°
40
θ
360°
RESISTIVE,
20
INDUCTIVE LOAD
PER SINGLE
ELEMENT
0
0
20 40 60 80 100
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
2000
1600
1200
800
400
0
1 2 3 5 7 10 20 30 50 70100
CONDUCTION TIME
(CYCLE AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10 0 2 3 5 710 1
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
150
(SINGLE PHASE HALFWAVE)
PER SINGLE ELEMENT
140 θ
360°
130
RESISTIVE,
INDUCTIVE
LOAD
120
θ=30° 60° 90° 120° 180°
110
100
0
20 40 60 80 100
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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