TLP630 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TLP630

TOSHIBA Photocoupler IRED & Photo-Transistor

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Forward current

Capacitance

Collector-emitter breakdown voltage

Emitter-collector breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector dark current

Collector dark current

Capacitance (collector to emitter)

Symbol

Test Condition

VF

IF

CT

V(BR)CEO

V(BR)ECO

V(BR)CBO

V(BR)EBO

ICEO

ICBO

CCE

IF = 10 mA

VF = 0.7 V

V = 0 V, f = 1 MHz

IC = 0.5 mA

IE = 0.1 mA

IC = 0.1 mA

IE = 0.1 mA

VCE = 24 V

VCE = 24 V, Ta = 85 °C

VCB = 10 V

V = 0 V, f = 1MHz

TLP630

Min Typ. Max Unit

1.0 1.15 1.3

V

―

2.5

10

μA

―

60

―

pF

55

―

―

V

7

―

―

V

80

―

―

V

7

―

―

V

―

10 100 nA

―

2

50

μA

―

0.1

―

nA

―

10

―

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Current transfer ratio

Saturated CTR

Base photo-current

Collector-emitter saturation

voltage

Off-state collector current

CTR symmetry

IC / IF

IF = ±5 mA, VCE = 5 V

Rank GB

IC / IF(sat)

IPB

IF = ±1 mA, VCE = 0.4 V

Rank GB

IF = ±5 mA, VCB = 5 V

VCE(sat) IC = 2.4 mA, IF = ±8 mA

IC(off)

IC(ratio)

VF = ±0.7 V, VCE = 24 V

IC(IF = -5 mA) /

IC(IF = +5 mA)

(Note 1)

50

100

―

30



―

―

0.33

Note 1:

IC(ratio)

=

IC2(IF

IC1(IF

= IF2,

= IF1,

VCE

VCE

=

=

5V)

5V)

Typ. Max Unit

―

600

%

―

600

60

―

%

―

―

10

―

μA

―

0.4

V

1

10

μA

1

3

―

© 2019

3

Toshiba Electronic Devices & Storage Corporation

2019-06-24

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