TLP558 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TLP558 Datasheet PDF : 6 Pages
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Absolute Maximum Ratings
TLP558
Charactersitic
Symbol
Rating
Unit
Forward current
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Output voltage
Supply voltage
Three state enabel voltage
Output power dissipation
Output power dissipation derating (Ta > 70 °C)
IF
(Note 1) IFPT
VR
PD
IO
(Note 2) IOP
VO
VCC
VE
PO
ΔPO/ΔTa
10
1
5
45
40 / -25
80 / -50
-0.5 to 20
-0.5 to 20
-0.5 to 20
100
-1.8
mA
A
V
mW
mA
mA
V
V
V
mW
mW/°C
Total package power dissipation
Total package power dissipation derating (Ta > 70 °C)
PT
ΔPT/ΔTa
200
mW
-3.6
mW/°C
Operating temperature range
Storage temperature range
Lead solder temperature(10 s)
Isolation voltage (AC, 60 s, R.H. ≤ 60 %, Ta=25°C)
(Note 3)
(Note 4)
Topr
Tstg
Tsol
BVS
-40 to 85
-55 to 125
260
2500
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 1 μs, 300 pps.
Note 2: Pulse width ≤ 5μ s, duty ratio ≤ 0.025.
Note 3: 1.6 mm below seating plane.
Note 4: Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Input current, on
Input voltage, off
Supply voltage
Enable voltage high
Enable voltage low
Fan out(TTL load)
IF(ON)
2 (Note 1)
―
VF(OFF)
0
―
VCC
4.5
―
VEH
2.0
―
VEL
0
―
N
―
―
5
mA
0.8
V
20
V
20
V
0.8
V
4
―
Operating temperature
Topr
-25
―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Note 1: 2 mA condition permits at least 20 % CTR degradation guardband.
Initial switching threshold is 1.6 mA or less.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
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