TLP550 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TLP550 Datasheet PDF : 7 Pages
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Current Transfer Ratio
Classification
(None)
Rank O
Rank Y
Current Transfer Ratio (%)
(IC/IF)
MIN
MAX
10
―
19
―
35
―
Marking of Classification
Blank, O, Y
O
Y
TLP550
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward
current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Supply voltage
Output voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage
(AC, 1min., R.H. = 40~60%)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
IF
IFP
IFPT
VR
PD
IO
IOP
VCC
VO
PO
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
−0.5~15
−0.5~15
100
−55~100
−55~125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
2
2007-10-01
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