TLP523-2 Ver la hoja de datos (PDF) - Toshiba

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Fabricante

TLP523-2

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP523,TLP523−2,TLP523−4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP523, TLP523−2, TLP523−4

Programmable Controllers

DC−Output Module

Solid State Relay

Unit in mm

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide

infrared emitting diode coupled with a silicon, darlington connected,

phototransistor which has an integral base−emitter resistor to optimize

switching speed and elevated temperature characteristics.

The TLP523−2 offers two isolated channels in an eight lead plastic DIP

package, while the TLP523−4 provide four isolated channels per

package.

• Current transfer ratio: 500% (min.) (IF = 1 mA)

• Isolation voltage: 2500 Vrms (min.)

• Collector−emitter voltage: 55 V (min.)

• Leakage current: 10μA (max.) (Ta = 85°C)

• UL recognized: UL1577, file no. E67349

TOSHIBA

Weight: 0.26 g

11−5B2

Pin Configurations (top view)

TLP523

TLP523-2

TLP523-4

1

41

81

16

2

32

72

15

1 : Anode

3

63

14

2 : Cathode

3 : Emitter

4

54

13

4 : Collector

1, 3 : Anode

5

12

2, 4 : Cathode

5, 7 : Emitter

6

11

6, 8 : Collector

7

10

8

9

1, 3, 5, 7 : Anode

2, 4, 6, 8 : Cathode

9, 11, 13, 15 : Emitter

10, 12, 14, 16: Collector

TOSHIBA

Weight: 0.54 g

11−10C4

TOSHIBA

Weight: 1.1 g

11−20A3

1

2007-10-01

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