TLP3114(TP,F) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TLP3114(TP,F) Datasheet PDF : 6 Pages
| |||
TLP3114
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
Forward Current Derating (Ta ≥ 25°C)
Reverse Voltage
Diode Power Dissipation
IF
ΔIF/°C
VR
PD
50
−0.5
5
50
mA
mA/°C
V
mW
Diode Power Dissipation Derating (Ta ≥25°C)
ΔPD /°C
-0.5
mW/°C
Junction Temperature
Off-State Output Terminal Voltage
Tj
VOFF
125
°C
40
V
On-State Current
ION
250
mA
On-State Current Derating (Ta ≥ 25°C)
ΔION/°C
−2.5
mA/°C
Output Power Dissipation
PO
188
mW
Output Power Dissipation Derating (Ta ≥ 25°C)
ΔPO / °C
−1.88
mW / °C
Junction Temperature
Tj
Storage Temperature Range
Tstg
Operating Temperature Range
Topr
Lead Soldering Temperature (10 s)
Tsol
Isolation Voltage (AC, 1 minute, R.H. ≤ 60%) (Note 1)
BVS
125
−40 to 125
−20 to 85
260
1500
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1):Device considered a two-terminal device : Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
CAUTION
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment
are earthed.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL MIN TYP. MAX UNIT
Supply Voltage
Forward Current
On-State Current
Operating Temperature
VDD
IF
ION
Topr
―
―
32
V
10
―
30
mA
―
―
250 mA
25
―
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance between terminals
SYMBOL
VF
IR
CT
TEST CONDITION
IF = 10 mA
VR = 5 V
VF = 0 V, f = 1 MHz
Off-State Current
IOFF
VOFF = 30 V, Ta = 50°C
MIN
TYP.
MAX UNIT
1.0
1.15
1.3
V
―
―
10
μA
―
15
―
pF
―
―
1000
pA
Capacitance between terminals
COFF
V = 0 V, f = 100 MHz, t < 1 s
―
5
7
pF
2
2017-06-08
Share Link: 