DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TLP371(2002) Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
TLP371 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TLP371,TLP372
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
60
mA
Forward current derating (Ta 39°C)
IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector-emitter voltage
VCEO
300
V
Collector-base voltage (TLP371)
VCBO
300
V
Emitter-collector voltage
VECO
0.3
V
Emitter-base voltage (TLP371)
VEBO
7
V
Collector current
IC
150
mA
Power dissipation
PC
300
mW
Power dissipation derating (Ta 25°C)
PC / °C
-3.0
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10 s)
Tsold
260
°C
Total package power dissipation
PT
350
mW
Total package power dissipation derating (Ta 25°C)
PT / °C
-3.5
mW / °C
Isolation voltage (AC, 1min., R.H. 60%)
(Note 1)
BVS
5000
Vrms
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
VCC
IF
IC
Topr
Min Typ. Max Unit
200
V
16
25
mA
120 mA
-25
85
°C
2
2002-09-25

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]