TLP350F Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

TLP350F

Photocoupler GaAℓAs IRED + Photo IC

Toshiba 

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP350F

Industrial Inverter

Inverter for Air Conditioner

IGBT/Power MOSFET Gate Drive

IH(Induction Heating)

TLP350F

Unit: mm

The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and

an integrated photodetector.

This unit is an 8-lead DIP package.

The TLP350F is suitable for gate driving IGBTs or power MOSFETs.

Absolute maximum ratings and electrical characteristics are the same as

TLP350technical datasheet.

• Peak output current: IO = ±2.5A (max)

• Guaranteed performance over temperature: −40 to 100°C

• Supply current:ICC = 2 mA (max)

• Power supply voltage: VCC = 15 to 30 V

• Threshold input current : IFLH = 5 mA (max)

• Switching time (tpLH/tpHL) : 500 ns (max)

• Common mode transient immunity: 15 kV/μs

• Isolation voltage: 3750 Vrms

• UL Recognized : UL1577,File No.E67349

• Option(D4)

VDE Approved : DIN EN 60747-5-2

Maximum Operating Insulation Voltage : 1140VPK

Highest Permissible Over Voltage

: 6000VPK

TOSHIBA

11-10C402

Weight: 0.54 g (typ.)

Pin Configuration (top view)

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option(D4)”

1

• Construction mechanical rating

2

7.62mm pitch

TLP350 type

10.16mm pitch 3

TLP350F type

Creepage distance 6.4 mm (min) 8.0 mm (min)

4

Clearance

6.4 mm (min) 8.0 mm (min)

Insulation thickness 0.4 mm (min) 0.4 mm (min)

8

1: NC

2: Anode

3: Cathode

7

4: NC

5: GND

6

6: VO (output)

7: NC

5

8: VCC

Truth Table

Input

H

L

LED

ON

OFF

Tr1

ON

OFF

Tr2

OFF

ON

Output

H

L

Schematic

IF

2+

VF

3−

ICC 8

(Tr1)

VCC

IO 6

(Tr2)

VO

5

GND

A 0.1 μF bypass capacitor must be connected

between pins 8 and 5. (See Note 6)

1

2007-10-01

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