TLP330(2002) Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

TLP330
(Rev.:2002)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Forward current

Capacitance

Collector-emitter

breakdown voltage

Emitter-collector

breakdown voltage

Collector-base

breakdown voltage

Emitter-base

breakdown voltage

Collector dark current

Collector dark current

Collector dark current

DC forward current gain

Capacitance

(collector to emitter)

Symbol

Condition

VF

IF = ±100 mA

IF

VF= ±0.7V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 0.5 mA

V(BR) ECO IE = 0.1 mA

V(BR) CBO IC = 0.1 mA

V(BR) EBO IE = 0.1 mA

ICEO

ICER

ICBO

hFE

CCE

VCE = 24 V

VCE = 24 V, Ta = 85°C

VCE = 24 V, Ta = 85°C

RBE = 1MΩ

VCE = 10V

VCE = 5 V, IC = 0.5mA

V = 0, f = 1 MHz

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Base photo-current

Collector-emitter

saturation voltage

Off-state collector current

CTR symmetry

Symbol

Condition

IC / IF

IC / IF(high)

IPB

VCE (sat)

IC(off)

IC (ratio)

IF = ±20 mA VCE = 1 V

IF = ±100 mA VCE = 1 V

IF = ±5 mA, VCB = 5 V

IC = 2.4 mA, IF = 20 mA

IC = 2.4 mA, IF = ±100 mA

VF = ± 0.7V, VCE = 24 V

IC (IF = -20mA)

/ IC (IF = +20mA)

TLP330

Min. Typ. Max. Unit

—

1.4

1.7

V

—

2.5

20

µA

—

100

—

pF

55

—

—

V

7

—

—

V

80

—

—

V

7

—

—

V

—

10

100

nA

—

2

50

µA

—

0.5

10

µA

—

0.1

—

nA

—

400

—

—

—

10

—

pF

MIn. Typ. Max. Unit

25

—

—

%

20

—

80

%

—

10

—

µA

—

—

0.4

V

—

—

0.4

—

1

10

µA

0.5

1

2

—

3

2002-09-25

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