TOSHIBA Infrared LED GaAs Infrared Emitter
TLN117(F)
Lead(Pb)-Free
Opto−Electoronic Switches
Floppy Disk Drives
Optical Mice
Optical Touch Sensors
• Small−side−view epoxy−resin package
• High radiant intensity: IE = 0.8mW / sr(min)at IF = 20mA
• Half−angle value: θ1 / 2 = ±15°(typ.)
TLN117(F)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Pulse forward current
IFP
600 (Note 1)
mA
Forward current derating
(Ta > 25°C)
Reverse voltage
Operating temperature
ΔIF / °C
VR
Topr
−0.33
5
−25~85
mA / °C
V
°C
TOSHIBA
4−3P1
Weight: 0.1 g (typ.)
Storage temperature
Tstg
−40~100
°C
Soldering temperature (5s)
Tsol
260 (Note 2)
°C
Pin Connection
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
1. Cathode
1
2 2. Anode
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≦ 100μs, repetitive frequency =100Hz
Note 2: Soldering must be performed 2mm from the bottom of the package body.
1
2007-10-01