CD22100E Ver la hoja de datos (PDF) - Harris Semiconductor

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Fabricante

CD22100E

CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating)

Harris Semiconductor 

CD22100

Test Circuits and Waveforms (Continued)

VDD

500µF

ID

0.1µF

105

TA = 25oC

1

2

CD4029

CLK Q3

3

CLK

Q4

4

Q2

5

16

S

104

15

14

CL

13

CL

103

12

VDD = 15V

10V

10V

5V

Q1

6

11

7

10

102

CL

8

9

CL

VSS

NOTE:

CLOSE SWITCH S AFTER APPLYING VDD

10

102

CL = 50pF

CL = 15pF

103

104

105

106

SWITCHING FREQUENCY (Hz)

FIGURE 4. DYNAMIC POWER DISSIPATION TEST CIRCUIT AND TYPICAL DYNAMIC POWER

DISSIPATION AS A FUNCTION OF SWITCHING FREQUENCY

ON

VIS

SW

10kΩ

VOS

50pF

SW = ANY CROSSPOINT

STROBE = DATA - IN = VDD

VDD

VIS

50%

0

tPLH

VDD

VOS

50%

0

50%

tPLH

50%

FIGURE 5. PROPAGATION DELAY TIME TEST CIRCUIT AND

WAVEFORMS (SIGNAL INPUT TO SIGNAL OUTPUT,

SWITCH ON)

CONTROLS

VIS

1kΩ

SW

VOS

10kΩ

CONTROL

SW = ANY CROSSPOINT

VDD

0

50mV

VOS

0

-50mV

FIGURE 6. TEST CIRCUIT AND WAVEFORMS FOR

CROSSTALK (CONTROL INPUT TO SIGNAL

OUTPUT)

0

TA = 25oC

-20 VDD = 10V

VIS = 10VP-P SINE WAVE

CL = 50pF

-40 RL = 1kΩ

ON

-60

VIS

SW

1kΩ

1kΩ

OFF

-80

SW = ANY CROSSPOINT

SW

VOS

1kΩ

-100

-120

102

103

104

105

106

INPUT SIGNAL FREQUENCY (Hz)

FIGURE 7. TEST CIRCUIT AND TYPICAL CROSSTALK BETWEEN SWITCH CIRCUITS IN

THE SAME PACKAGE AS A FUNCTON OF SIGNAL FREQUENCY

4-190

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