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LG1600FXH1298 Datasheet PDF : 20 Pages
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Data Sheet
August 1999
LG1600FXH Clock and Data Regenerator
Electrical Characteristics
tCASE = 0 °C to 70 °C, VSS = –4.7 V to –5.7 V, VDD = 5 V, bit rate = fB Gbits/s ±0.05% NRZ and data pattern =
223 – 1 PRBS, 200 mV ≤ V±IN ≤ 800 mV, BER < 1e–9, unless otherwise indicated.
Note: Minimum and maximum values are testing requirements. Typical values are characteristics of the device and
are the result of engineering evaluations. Typical values are for information purposes only and are not part of
the testing requirements.
Parameter
Symbol
Data Input Voltage
V–IN
Data Input Voltage
V+IN – V–IN
Data Output Voltage
V±OUT
Data Output Voltage
V±OUT
Clock Output Voltage
V±CLKO
Clock Output Voltage
V±CLKO
Clock Output Voltage
V±CLKO
Output Pulse Width Rela- PW%
tive to Bit Period T = 1/fB
Clock Output Duty Cycle DCCLKO
Clock/Data Output Transi- tr, tf
tion Time
Maximum Bit Error Rate BERMAX
LOS Output Voltage, Low VLOSL
LOS Output Voltage, High VLOSH
Conditions
Single ended on either input
Differential
ac coupled
dc coupled
dc coupled
ac coupled; fB ≤ 3 Gbits/s
ac coupled; fB > 3 Gbits/s
tCASE = 40 °C
tCASE = 40 °C
20% to 80%
Jitter modulation @ fB × 40 kHz,
tCASE = 40 °C
RL = 10 kΩ
RL = 10 kΩ, V–IN = 0 V
Loss of Signal Delay
Jitter Generation
Jitter Transfer Bandwidth
Output Reference Voltage
Jitter Tolerance
τLOS
JGEN
JBW
VREF
JTOL
Measured from last data transi-
tion, tCASE = 40 °C
—
User adjustable with RX as sug-
gested by Figure 8, tCASE = 25 °C
Load to ground ≥ 20 kΩ
fmod ≤ fB x 40 kHz, tCASE = 40 °C
Min
200
200
625
650
650
625
500
90
40
—
1e–3
–1
VDD –
0.5
10
—
—
–3.4
1.5
Typ
—
—
750
800
750
750
600
100
—
80
—
–0.8
VDD
30
0.005
fB
–3.15
5
Max
800
1600
900
900
900
900
900
110
60
100
—
0.5
VDD
100
0.01
—
–2.9
—
Unit
mVp-p
mVp-p
mVp-p
mVp-p
mVp-p
mVp-p
mVp-p
%
%
ps
—
V
V
µs
UI
MHz
V
UI
Acquisition/Recovery
Time
Supply Current
fB x 40 kHz ≤ fmod ≤ fB × 400 kHz, 0.6 fB/ 2 fB/fmod —
UI
tCASE = 40 °C
fmod ≥ fB × 400 kHz,
tCASE = 40 °C
fmod
0.15
0.5
—
UI
τACQ
Measured from first data
transition*, tCASE = 40 °C
—
600
800
µs
ISS
–5.7 V ≤ VSS ≤ –4.7 V
—
290
320
mA
* Parameter guaranteed by design or characterization and not production tested.
Lucent Technologies Inc.
9
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