TK60F08K3 Ver la hoja de datos (PDF) - Toshiba
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TK60F08K3 Datasheet PDF : 10 Pages
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TK60F08K3
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±1
µA
Drain cut-off current
IDSS
VDS = 75 V, VGS = 0 V
10
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 4)
V(BR)DSS ID = 10 mA, VGS = 0 V
V(BR)DSX ID = 10 mA, VGS = -20 V
75
V
45
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
4.0
Drain-source on-resistance
RDS(ON) VGS = 10 V, ID = 30 A
6.5
8.5
mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = 10 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min Typ. Max Unit
3600
pF
350
500
16
ns
33
13
63
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 60 V, VGS = 10 V, ID = 60 A
Qgs
Qgd
Min Typ. Max Unit
75
nC
44
31
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
(Note 5)
(Note 5)
IDR
IDRP
VDSF
IDR = 60 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr
IDR = 60 A, VGS = 0 V
Qrr
-dIDR/dt = 50 A/µs
Note 5: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
60
A
180
-0.9 -1.2
V
50
ns
40
nC
3
2012-06-21
Rev.1.0
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