TIP42CG-TN3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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TIP42CG-TN3-T

PNP EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

TIP42C

PNP PLANAR TRANSISTOR

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

VCEO

-100

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current (DC)

IC

-6

A

Collector Current (Pulse)

IC

-10

A

Base Current

IB

-2

A

Collector Dissipation (Tc=25℃)

TO-220

TO-252

PC

65

20

W

W

Junction Temperature

Storage Temperature

TJ

+150

℃

TSTG

-65 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Emitter Sustaining Voltage (*) BVCEO IC=-30mA, IB=0

Collector Cutoff Current

ICEO VCE=-60V, IB=0

Collector Cutoff Current

ICES VCE=-100V, VEB=0

Emitter Cutoff Current

IEBO VBE=-5V, IC=0

Collector-Emitter Saturation Voltage (*) VCE(SAT) IC=-6A, IB=-600mA

Base-Emitter on Voltage (*)

VBE(ON) IC=-6A, VCE=-4V

DC Current Gain (*)

hFE

IC=-300mA, VCE=-4V

IC=-3A, VCE=-4V

Current Gain Bandwidth Product

fT

* Pulse Test: PW≦300µs, Duty Cycle≦2%

VCE=-10V, IC=-500mA,

f=1MHz

MIN TYP MAX UNIT

-100

V

-0.7 mA

-400 µA

-1 mA

-1.5 V

-2.0 V

30

15

75

3

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R203-007.B

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