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TIP120-BP-HF Ver la hoja de datos (PDF) - Micro Commercial Components

Número de pieza
componentes Descripción
Fabricante
TIP120-BP-HF
MCC
Micro Commercial Components MCC
TIP120-BP-HF Datasheet PDF : 2 Pages
1 2
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Halogen free available upon request by adding suffix "-HF"
Mounting Torgue: 5 in-lbs Maximum
Low collector-emitter saturation voltage
Amplifier applications -emitter shunt resistors
TO-220 compact package
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings@ Ta=25OC Unless Otherwise Specified
Symbol
Rating
Rating
Unit
VCEO Collector-Emitter Voltage
60
V
VCBO Colector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
ICP
Peak Collector Current
8.0
A
IC
PC
TJ
TSTG
RthJC
RthJA
Collector Current
Collector power dissipation(Tc=25OC)
Junction Temperature
Storage Temperature
Thermal Resistence, Junction to case
Thermal Resistence, Junction to ambient
5.0
65
-55 to +150
-55 to +150
1.92
62.5
A
W
OC
OC
OC/W
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min
Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
(I C=100mAdc, IB=0)
ICBO
Collector-Base Cutoff Current
(V CB=60Vdc,IE=0)
IEBO
Emitter-Base Cutoff Current
(V EB=5.0Vdc, IC=0)
ICEO
Collector-Emitter Cutoff Current
(V CE=30Vdc, IB=0)
ON CHARACTERISTICS
hFE-1
hFE-2
V CE(sat)-1
V CE(sat)-2
V BE(on)
Forward Current Transfer Ratio
(I C=0.5Adc, VCE=3.0Vdc)
Forward Current Transfer Ratio
(I C=3.0Adc, VCE=3.0Vdc)
Collector-Emitter Saturation Voltage
(I C=3.0Adc, IB=12mAdc)
Collector-Emitter Saturation Voltage
(I C=5.0Adc, IB=20mAdc)
Base-Emitter On Voltage
(I C=3.0Adc, VCE=3.0Adc)
60
---
Vdc
---
0.2
mAdc
---
2.0
mAdc
---
0.5
mAdc
1000
1000
---
---
---
---
---
2.0 Vdc
4.0 Vdc
2.5 Vdc
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
TIP120
NPN Epitaxial
Darlington Transistors
TO-220
B
F
C
S
Q
A
12 3
H
T
U
K
V
L
J
G
N
D
PIN 1.
PIN 2.
R
BASE
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
G
.190
.110
2.29
H
---
.250
---
J
.012
.025
0.30
2.79
6.35
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
2.92
S
.045
.055
1.14
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
Revision: C
www.mccsemi.com
1 of 2
2013/01/01

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