Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
TIM1414-18L-252 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TIM1414-18L-252
MICROWAVE POWER GaAs FET
Toshiba
TIM1414-18L-252 Datasheet PDF : 4 Pages
1
2
3
4
TIM1414-18L-252
Power Dissipation vs. Case Temperature
100
80
60
PT(W)
40
20
0
0
40
80
120
160
200
Tc (
°
C)
IM3 vs. Output Power Characteristics
-20
V
DS
= 9V
I
DSQ
≅
4.4A
f= 14.5GHz
∆
f= 5MHz
-30
IM3(dBc)
-40
-50
-60
30
32
34
36
38
40
Po(dBm), Single Carrier Level
4
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]