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TICP107

SILICON CONTROLLED RECTIFIERS

Power Innovations Ltd 

TICP107 SERIES

SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

electrical characteristics at 25°C ambient temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

IDRM

Repetitive peak

off-state current

VD = rated VDRM

RGK = 1 kΩ

20

µA

IRRM

Repetitive peak

reverse current

VR = rated VRRM

IG = 0

200

µA

IGT Gate trigger current

VGT Gate trigger voltage

IH Holding current

VT On-state voltage

VAA = 12 V

VAA = 12 V

VAA = 12 V

IT = 2 A

RL = 100 Ω

RL = 100 Ω

(see Note 5)

tp(g) ≥ 20 µs

50

tp(g) ≥ 20 µs

0.4

Initiating IT = 10 mA

200

µA

1

V

2

mA

1.4

V

NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

PRODUCT INFORMATION

2

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