TGA4521(2005) Ver la hoja de datos (PDF) - TriQuint Semiconductor
Número de pieza
componentes Descripción
Fabricante
TGA4521 Datasheet PDF : 9 Pages
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Advance Product Information
October 28, 2005
TGA4521
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Output Power @ 1dB Gain Compression, P1dB
Saturated Power, Psat
OTOI @ 16dBm/tone
TYPICAL
32 - 45
6.0
175
-0.7
16
6
10
24
25
33
UNITS
GHz
V
mA
V
dB
dB
dB
dBm
dBm
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
TCH
(OC)
RθJC Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 175 mA
Pdiss = 1.05 W
144
RTJC
(qC/W)
70
TM
(HRS)
1.7E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70 oC baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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