TGA2511 Ver la hoja de datos (PDF) - TriQuint Semiconductor

Número de pieza

componentes Descripción

Fabricante

TGA2511

X Band Low Noise Amplifier

TriQuint Semiconductor 

TGA2511

TABLE IV

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

θJC Thermal Resistance

(channel to Case)

θJC Thermal Resistance

(channel to Case)

Vd = 5 V

Id = 160 mA Gate Bias

Pdiss = 0.80 W

Vd = 5 V

Id = 80 mA Self Bias

Pdiss = 0.40 W

TCH

(°C)

103.9

82.7

θJC

(°C/W)

42.4

31.7

Tm

(HRS)

3.8E+6

4.1E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100%

of DC power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature

1.E+13

1.E+12

1.E+11

1.E+10

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

FET6

1.E+04

25

50

75

100

125

150

Channel Temperature ( °C)

4

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

March 2010 © Rev A

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