TGA2511 Ver la hoja de datos (PDF) - TriQuint Semiconductor

Número de pieza

componentes Descripción

Fabricante

TGA2511

X Band Low Noise Amplifier

TriQuint Semiconductor 

TGA2511

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Vg

Id

Ig

PIN

PD

TCH

TM

TSTG

Drain Voltage

Gate Bias: [3.5 + (0.0125)(Id)] V

Self Bias: [3.5 + (0.0360)(Id)] V

Gate Voltage Range

-1 TO +0.5 V

Drain Current (gate biased)

240 mA

Gate Current

14 mA

Input Continuous Wave Power

21 dBm

Power Dissipation

1.56 W

Operating Channel Temperature

200 °C

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature

-65 to 150 °C

2/ 3/

2/ 4/

4/

2/ 5/

6/ 7/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ Unit for Id is mA.

4/ Total current for the entire MMIC.

5/ When operated at this bias condition with a base plate temperature of 70°C, the median life is

3.4E5.

6/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

7/ These ratings apply to each individual FET.

TABLE II

DC PROBE TESTS

(Ta = 25 °C, Nominal)

SYMBOL

PARAMETER

VBVGS, Q1

Breakdown Voltage Gate-Source

VP, Q1,2,5,6 Pinch-Off Voltage

Q1, Q2, Q5, Q6 are 400 um FET.

MIN.

-30

-0.7

TYP.

MAX.

-5

-0.1

UNITS

V

V

2

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

March 2010 © Rev A

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