TGA2508-EPU Ver la hoja de datos (PDF) - TriQuint Semiconductor
Número de pieza
componentes Descripción
Fabricante
TGA2508-EPU Datasheet PDF : 10 Pages
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Advance Product Information
August 4, 2004
TGA2508-EPU
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
V+
V-
I+
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
| IG | Gate Supply Current
PIN
PD
TCH
TM
TSTG
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-2 to 0 V
591 mA
16 mA
17 dBm
6.75 W
150 0C
320 0C
-65 to 150 0C
NOTES
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is
reduced from 6.4E+7 to 1E+6 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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