TF841S Ver la hoja de datos (PDF) - Sanken Electric co.,ltd.
Número de pieza
componentes Descripción
Fabricante
TF841S Datasheet PDF : 2 Pages
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TF821S, TF841S, TF861S
vT – iT Characteristics (max)
100
50
Tj =125°C
10
Tj = 25°C
5
1
0.8 1.0
2.0
3.0
On-state voltage vT ( V )
IT(AV) – PT(AV) Characteristics
20
50Hz Half-cycle sinewave
θ : Conduction angle
16 180° θ 0°
12
8
4
0
0
5
10
15
Average on-state current IT(AV) (A)
Pulse trigger temperature
v Characteristics gt (Typical)
2.0
vgt
tw
Tj =– 40°C
1.5
–20°C
1.0
0.5
0.5 1
25°C
75°C
125°C
10
100
Pulse width tw (µs)
1000
VGT temperature Characteristics
(Typical)
1.0
(VD=6V, RL=10Ω)
0.8
0.6
0.4
0.2
0
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
ITSM Ratings
140
120
100
Initial junction temperature
Tj=125°C
10 ms
1 cycle
I TSM
80
50Hz
60
40
20
1
5 10
50 100
Number of cycle
IT(AV) – Tc Ratings
150
125
100
50Hz Half-cycle sinewave
θ : Conduction angle
180° θ 0°
75
50
25
0
0
5
10
15
Average on-state current IT(AV) (A)
Pulse trigger temperature
Characteristics igt (Typical)
30
igt
tw
10
Tj =– 40°C
5
–20°C
25°C
1
0.5
0.2
0.5 1
75°C
125°C
10
100
Pulse width tw (µs)
1000
IGT temperature Characteristics
(Typical)
50
(VD=6V, RL=10Ω)
30
10
5
3
1
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
Gate Characteristics
14
2
12
1
10
0
0
10
20
30
8
Gate trigger current IGT (mA)
P
6
GM =5W
4
2 See graph at the upper right
0
0
1
2
3
Gate current iGF (A)
IH temperature Characteristics
(Typical)
100
(VD=30V, RGK=1kΩ)
50
10
5
3
– 40
0 25 50 75 100 125
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics (Junction to case)
10
1
0.1
1
10
102
103
104
105
t, Time (ms)
17
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