Philips Semiconductors
Sound fader control circuit
Product specification
TEA6300
TEA6300T
SYMBOL
(S + N)/N
(S + N)/N
(S + N)/N
(S + N)/N
(S + N)/N
(S + N)/N
Pno
αB
Source selector
Zi
Zo
RL
CL
αS
Gv
Vb int/Vref
Vi(rms)
Vi(rms)
THD
Vno
Vo
PARAMETER
Signal plus noise-to-noise ratio
bass and treble linear; notes 1 and 2
CCIR 468-2 weighted; quasi peak
Vi = 50 mV; Vo = 46 mV; Po = 50 mW
Vi = 500 mV; Vo = 45 mV; Po = 50 mW
Vi = 50 mV; Vo = 200 mV; Po = 1 W
Vi = 500 mV; Vo = 200 mV; Po = 1 W
Vi = 50 mV; Vo = 500 mV; Po = 6 W
Vi = 500 mV; Vo = 500 mV; Po = 6 W
Noise output power
mute position, only contribution of
TEA6300; power amplifier for 25 W
Crosstalk (20 log Vbus(p-p)/Vo(rms))
between bus inputs and signal outputs
GV = 0 dB; bass and treble linear
Input impedance
Output impedance
Output load resistance
Output load capacity
Input isolation
not selected source; frequency range
40 Hz to 12,5 kHz
Voltage gain
RL ≥ 10 kΩ
Internal bias voltage ratio
Maximum input voltage level (RMS value)
THD < 0,5%
THD < 0,5%; VCC = 7,5 V
Total harmonic distortion
Vi = 500 mV; RL = 10 kΩ
Noise output voltage
weighted CCIR 468-2, quasi peak
DC offset voltage
between any inputs
MIN.
TYP. MAX. UNIT
−
65
−
dB
−
67
−
dB
65
70
−
dB
65
78
−
dB
−
70
−
dB
−
85
−
dB
−
−
10
nW
−
110
−
dB
20
30
40
kΩ
−
−
100
Ω
10
−
−
kΩ
0
−
200
pF
−
80
−
dB
−
0
−
dB
−
1
−
−
1,65
−
V
−
1,5
−
V
−
−
0,1
%
−
9
20
µV
−
−
10
mV
May 1990
7