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TDA9109SN Ver la hoja de datos (PDF) - STMicroelectronics

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TDA9109SN Datasheet PDF : 30 Pages
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TDA9109/SN
B+ SECTION
Operating Conditions
Symbol
Parameter
FeedRes Minimum Feedback Resistor
Test conditions
Resistor between Pins 15 and 14
Min. Typ. Max. Unit
5
k
Electrical Characteristics (VCC = 12V, Tamb = 25oC)
Symbol
Parameter
Test conditions
OLG Error Amplifier Open Loop Gain
At low frequency (see Note 16)
ICOMP
Sunk Current on Error Amplifier Pin 14 (see Figure 14)
Output when BO UT is in safety
condition
UGBW Unity Gain Bandwidth
(see Note 13)
IRI Regulation Input Bias Current
Current sourced by Pin 15 (PNP base)
EAOI Error Amplifier Output Current
Current sourced by Pin 14
Current sunk by Pin 14
CSG Current Sense Input Voltage Gain Pin 16
MCEth Max Current Sense Input Threshold Pin 16
Voltage
ISI Current Sense Input Bias Current
Current sourced by Pin 16 (PNP base)
Tonmax Maximum ON Time of the external % of Horizontal period,
power transistor
f0 = 27kHz (see Note 17)
B+OSV B+ Output Saturation Voltage
V28 with I28 = 10mA
IVREF Internal Reference Voltage
On erroramp (+) inputfor Subaddress 0B
Byte 1000000
VREFADJ I nt e rna l R e f e r en ce V ol t ag e Byte 1111111
Adjustment Range
Byte 0000000
tFB+ Fall Time
Pin 28
Min.
Typ.
85
0.5
6
0.2
3
1.2
1
100
0.25
4.8
+20
-20
100
Max.
0.5
2
Unit
dB
mA
MHz
µA
mA
mA
V
µA
%
V
V
%
%
ns
Notes : 13. These parameters are not tested on each unit. They are measured during our internal qualification.
16. These parameters are not tested on each unit. They are measured during our internal qualification procedure which includes
characterization on batches coming from corners of our processes and also temperature characterization.
17. The external power transistor is OFF during about 400ns.
Figure 1 : Vertical Dynamic Focus Function
Figure 2 : E/W Output
VDFAMP
B
A
HDFDC
Figure 3 : Dynamic Horizontal Phase Control
Output
B
EWPARA
A
EWDC
Figure 4 : Keystone Effect on E/W Output
(PCC and Corner Inhibited)
B
A
SPBPARA
DHPCDC
Keyadj
11/30

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