TCET1117G Ver la hoja de datos (PDF) - Vishay Semiconductors
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TCET1117G Datasheet PDF : 9 Pages
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TCET111.(G)
Vishay Semiconductors
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Emitter
Parameter
Forward current
Symbol
IF
VISHAY
Max
Unit
130
mA
Detector
Parameter
Power dissipation
Symbol
PDiss
Max
Unit
265
mW
Coupler
Parameter
Rated impulse voltage
Safety temperature
Symbol
VIOTM
Tsi
Max
Unit
8
kV
150
°C
Insulation Rated Parameters
Parameter
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test), (see
figure 2)
Insulation resistance
Test condition
100 %, ttest = 1 s
tTr = 60 s, ttest = 10 s
tTr = 60 s, ttest = 10 s
VIO = 500 V
VIO = 500 V, Tamb = 100 °C
VIO = 500 V, Tamb = 150 °C
(construction test only)
300
250
Phototransistor
Psi ( mW )
200
150
100
50
0
0
94 9182
IR-Diode
Isi ( mA )
25 50 75 100 125 150
Tsi – Safety Temperature ( °C )
Figure 1. Derating diagram
Symbol
Vpd
VIOTM
Vpd
RIO
RIO
RIO
VIOTM
VPd
VIOWM
VIORM
Min
1.6
8
1.3
1012
1011
109
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Unit
kV
kV
kV
Ω
Ω
Ω
0
t1
13930
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 2. Test pulse diagram for sample test according to DIN VDE
0884; IEC60747
www.vishay.com
4
Document Number 83546
Rev. A3, 18-Mar-03
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