2N3467L Ver la hoja de datos (PDF) - Semicoa Semiconductor
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2N3467L Datasheet PDF : 2 Pages
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Data Sheet No. 2N3467L
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
40
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
40
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
V(BR)EBO
5.0
Collector-Base Cutoff Current
VCB = 30 V
VCB = 30 V, TA = +150oC
ICBO1
---
ICBO2
---
Collector-Emitter Cutoff Current
VEB = 3.0 V, VCE = 30 V
ICEX
---
ON Characteristics
Forward current Transfer Ratio
IC = 150 mA, VCE = 1.0 V (pulse test)
IC = 500 mA, VCE = 1.0 V (pulse test)
IC = 1.0 A, VCE = 5 V (pulse test)
IC = 150 mA, VCE = 1.0 V (pulse test), T = -55oC
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
Symbol
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
VBE(sat)3
Min
40
40
40
16
---
---
---
---
0.8
---
Small Signal Characteristics
Symbol Min
Extrapolated Unity Gain Frequency
VCE = 10 V, IC = 50 mA, f = 100 MHz
ft
175
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
COBO
---
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
CIBO
---
Switching Characteristics
Delay Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Rise Time
IC = 500 mA, IB1 = 50 mA, VEB = 2 V
Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
Symbol Min
td
---
tr
---
ts
---
tf
---
Max
---
---
---
100
50
100
Max
---
120
---
---
0.35
0.6
1.2
1.0
1.2
1.6
Max
500
25
100
Max
10
30
60
30
Unit
V
V
V
nA
µA
nA
Unit
---
---
---
---
V dc
V dc
V dc
V dc
V dc
V dc
Unit
MHz
pF
pF
Unit
ns
ns
ns
ns
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