TC5565 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TC5565

8192 WORD X 8 BIT CMOS STATIC RAM

Toshiba 

TC5565APL-10, TC5565APL-12, TC5565APL-15

TC5565AFL-10, TC5565AFL-12, TC5565AFL-15

Note 1. R/W is High for Read Cycle.

2. Assuming that \CE1 Low transition of CE2 High transition occurs coincident with or after R/W Low transition, Outputs

remain in a high impedance state.

3. Assuming that \CEl High transition or CE2 Low transition occurs coincident with or prior to R/W High transition, Outputs

remain in a high impedance state.

4. Assuming that \OE is High for Write Cycle, Outputs are in high impedance state during this period.

DATA RETENTION CHARACTERISTICS (Ta=0~70°C)

SYMBOL

PARAMETER

VDH

IDDS2

Data Retention Supply Voltage

Stand by Supply Current

VDD=3.0V

VDD=5.5V

tCDR

Chip Deselection to Data Retention Mode

tR

Recovery Mode

Note (1) : Read cycle Time.

MIN.

2.0

-

-

0

tRC(1)

TYP.

-

-

-

-

-

MAX.

5.5

50

100

-

-

UNIT

V

uA

us

us

\CE1 Controlled Data Retention Mode (2)

CE2 Controlled Data Retention Mode (4)

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