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TC4626

POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

TelCom Semiconductor Inc => Microchip 

POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

TC4626

TC4627

ABSOLUTE MAXIMUM RATINGS

Package Power Dissipation (TA ≤ 70°C)

PDIP .................................................................730mW

CerDIP .............................................................. 800mW

SOIC .................................................................760mW

Derating Factor

PDIP ....................................... 5.6 mW/°C Above 36°C

CerDIP ........................................................ 6.0 mW/°C

Supply Voltage ...........................................................6.2V

Input Voltage, Any Terminal ...... VS + 0.3V to GND – 0.3V

Operating Temperature : M Version ...... – 55°C to +125°C

E Version ......... – 40°C to +85°C

C Version .............. 0°C to +70°C

Maximum Chip Temperature ................................. +150°C

Storage Temperature ............................ – 65°C to +150°C

Lead Temperature (10 sec) ................................... +300°C

ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.

Symbol

Parameter

Driver Input

VIH

Logic 1, Input Voltage

VIL

Logic 0, Input Voltage

IIN

Input Current

Driver Output

VOH

High Output Voltage

VOL

Low Output Voltage

RO

Output Resistance, High

RO

Output Resistance, Low

IPK

Peak Output Current

Switching Time

tR

tF

tD1

tD2

FMAX

Rise Time

Fall Time

Delay Time

Delay Time

Maximum Switching Frequency

Voltage Booster

R3

Voltage Tripler Output

Source Resistance

R2

Voltage Doubler Output

Source Resistance

FOSC

VOSC

Oscillator Frequency

Oscillator Amplitude

Measured at C1-

UV

@ VBOOST

VSTART

@ VBOOST

Undervoltage Threshold

Start Up Voltage

VBOOST

@VDD = 5V

Power Supply

IDD

Power Supply Current

VDD

Supply Voltage

Test Conditions

Min

Typ

Max Unit

0V ≤ VIN ≤ VDRIVE

2.4

—

—

V

—

—

0.8

V

–1

—

1

µA

IOUT = 10 mA, VDD = 5V

IOUT = 10 mA, VDD = 5V

VBOOST – 0.025 —

—

—

—

10

—

8

—

1.5

—

V

0.025

V

15

Ω

10

Ω

—

A

Test Figure 1,2

—

33

40

nsec

Test Figure 1,2

—

27

35

nsec

Test Figure 1,2

—

35

45

nsec

Test Figure 1,2

—

45

55

nsec

Test Figure 1

1.0

—

—

MHz

VDD = 5V, VBOOST > 8.5V

IL = 10 mA, VDD = 5V

RLOAD = 10kΩ

No Load

—

300

400

Ω

—

120

200

Ω

12

—

28

kHz

4.5

—

10

V

7.0

7.8

8.5

V

10.5

11.3

12

V

14.6

—

—

V

VIN = LOW or HIGH

—

—

2.5

mA

4.0

—

6.0

V

4-272

TELCOM SEMICONDUCTOR, INC.

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