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TC4426 Ver la hoja de datos (PDF) - TelCom Semiconductor Inc => Microchip

Número de pieza
componentes Descripción
Fabricante
TC4426
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC4426 Datasheet PDF : 6 Pages
1 2 3 4 5 6
TC4426
TC4427
TC4428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
PIN CONFIGURATIONS
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (TA 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
NC 1
IN A 2
GND 3
IN B 4
TC4426
8 NC
7 OUT A
6 VDD
5 OUT B
2,4
7,5
INVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
NC 1
IN A 2
GND 3
IN B 4
TC4427
8 NC
7 OUT A
6 VDD
5 OUT B
2,4
7,5
NONINVERTING
NC 1
IN A 2
GND 3
IN B 4
TC4428
8 NC
7 OUT A
6 VDD
5 OUT B
2
7
4
5
DIFFERENTIAL
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V VDD 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
VIH
Logic 1 High Input Voltage
VIL
Logic 0 Low Input Voltage
IIN
Output
Input Current
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance
IPK
Peak Output Current
IREV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
0V VIN VDD
VDD = 18V, IO = 10 mA
Duty Cycle 2%, t 30 µsec
Duty Cycle 2%
t 30 µsec
Figure 1
Figure 1
Figure 1
Figure 1
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
2.4
V
0.8
V
–1
1
µA
VDD – 0.025 —
7
1.5
> 0.5
V
0.025 V
10
A
A
19
30
nsec
19
30
nsec
20
30
nsec
40
50
nsec
4.5
mA
0.4
mA
4-246
TELCOM SEMICONDUCTOR, INC.

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