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TC1034ECT

Linear Building Block – Single Operational Amplifiers in SOT Packages

Microchip Technology 

TC1034/TC1035

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD + 0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1034/TC1035 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = -40° to +85°C and VDD = 1.8V to 5.5V, unless otherwise specified. Typical values apply at 25°C.

Minimum and maximum values apply for VDD = 3.0V.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

Shutdown Input (TC1035 Only)

VIH

VIL

ISI

Op Amp

Input High Threshold

Input Low Threshold

Shutdown Input Current (Note 1)

IQ

ISHDN

Supply Current, Operating (Note 1)

Supply Current, Shutdown Mode

(Note 1)

ROUT(SD) Output Resistance in Shutdown

(Note 1)

COUT(SD) Output Capacitance in Shutdown

(Note 1)

TSEL

TDESEL

AVOL

VICMR

VOS

Select Time

(VOUT from SHDN = VIH) (Note 1)

Deselect Time

(VOUT from SHDN = VIL) (Note 1)

Large Signal Voltage Gain

Common Mode Input Voltage Range

Input Offset Voltage (Note 1)

1.8

80% VDD

—

—

—

—

20

—

—

—

—

VSS – 0.2

IB

Input Bias Current

-100

VOS(DRIFT) Input Offset Voltage Drift

—

GBWP

Gain Bandwidth Product

—

SR

Slew Rate

—

VOUT

CMRR

Output Signal Swing

Common Mode Rejection Ratio

PSRR

Power Supply Rejection Ratio

Note 1: TC1035 only.

VSS + 0.05

70

80

—

—

—

—

6

0.05

—

—

15

20

100

—

±100

±0.3

50

±4

90

35

—

—

—

5.5

V

—

V

20% VDD

V

±100

nA

10

µA Output Open, SHDN = VDD

0.1

µA SHDN = VSS

—

MΩ SHDN = VSS

5

pF SHDN = VSS

—

µsec RL=10kΩ to VSS

—

nsec RL=10kΩ to VSS

—

VDD + 0.2

±500

±1.5

100

—

—

—

VDD – 0.05

—

—

V/mV

V

µV

mV

pA

µV/°C

kHz

mV/µsec

V

dB

dB

RO = 10kΩ, VDD = 5V

VDD = 3V, VCM = 1.5V, TA = 25°C

TA = -40°C to 85°C

TA = 25°C;

VCM = VDD to VSS

VDD = 3V; VCM = 1.5V

VDD = 1.8V to 5.5V;

VO = VDD to VSS

CL = 100pF,

RL = 1MΩ to GND,

Gain = 1,

VIN = VSS to VDD

RL = 10kΩ

TA = 25°C; VDD = 5V

VCM = VDD to VSS

TA = 25°C, VCM = VSS

VDD = 1.8V to 5V

DS21343B-page 2

© 2002 Microchip Technology Inc.

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