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RMBA09501A-58

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

Raytheon Company 

RMBA09501A-58 - Cellular 2 Watt Linear GaAs

RF Components MMIC Power Amplifier

ADVANCED INFORMATION

Description

The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

RF Components’ pHEMT process. It is designed for use as a driver stage for Cellular base stations, or

as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high

linearity requirements for CDMA operation.

Features

! 2 Watt Linear output power at 36 dBc ACPR1 for CDMA operation

! OIP3 ≥43 dBc at 27 and 30 dBm power output

! Small Signal Gain of > 30 dB

! Small outline SMD package

Electrical

Characteristics2

Parameter

Min

Frequency Ranges

869

Gain (small signal)

30

Gain variation:

Over frequency range

Over temperature range

Noise Figure

Output power @ CDMA3 33

OIP34

43

Typ

35

+/-1.5

+/-2.5

6

45

Max Unit

894 MHz

dB

dB

dB

dB

dBm

dBc

Parameter

Min Typ Max Unit

Idd@33 dBm Pout - 7V

PAE@33 dBm Pout

Input VSWR (50Ω)

Drain Voltage (Vdd)

Gate Voltage (VG1,VG2)5 -2

Quiescent currents 5

(IDQ1, IDQ2)

Thermal Resistance

(Channel to Case) Rjc

1.0

A

28.5

%

2:1

7.0

Volts

-0.25 Volts

150, 400

11

mA

°C/W

Absolute

Ratings

Parameter

Symbol

Drain Supply Voltage1

Vdd

Gate Supply Voltage

Vgs

RF Input Power (from 50 Ω source) Pin

Operating Case Temperature

Tc

Storage Temperature Range

Tstg

Value

+10

-5

5

-30 to +85

-40 to +100

Unit

V

V

dBm

ºC

ºC

Notes:

1. Only under quiescent conditions – no RF applied.

2. VDD = 7.0V, Tc = 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.

3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the

average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885

KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at

band-center.

5. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve

IDQTOTAL=550mA can be used with nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been

optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier for

other modulation systems.

The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the

Parts List.

www.raytheonrf.com

Specifications are based on most current or latest revision.

Revised June 27, 2003

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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