DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TA8221 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
TA8221 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Peak supply voltage (0.2s)
DC supply voltage
Operating supply voltage
Output current (peak)
Power dissipation
Operating temperature
Storage temperature
Symbol
Rating
Unit
VCC (surge)
50
V
VCC (DC)
25
V
VCC (opr)
18
V
IO (peak)
9
A
PD
50
W
Topr
30~85
°C
Tstg
55~150
°C
TA8221AHQ / ALQ
Electrical Characteristics
(unless otherwise specified, VCC = 13.2V, RL = 4, f = 1kHz, Ta = 25°C)
Characteristic
Quiescent supply current
Output power
Symbol
ICCQ
POUT (1)
POUT (2)
Test
Cir
Test Condition
cuit
VIN = 0
VCC = 14.4V, RL = 2,
THD = 10%
RL = 2, THD = 10%
Min. Typ. Max. Unit
120 250 mA
30
17
26
W
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
POUT (3)
THD
GV
GV
VNO
THD = 10%
POUT = 1W
Rg = 0,
BW = 20Hz~20kHz
16
19
0.04
48
50
1.0
0
0.3
0.4
%
52
dB
1.0
dB
0.7 mVrms
Ripple rejection ratio
Input resistance
Output offset voltage
Current at standby state
R.R.
RIN
Voffset
ISB
fripple = 100Hz,
Rg = 600
VIN = 0
40
54
dB
30
k
100 0
100 mV
100 150
µA
Cross talk
C.T.
Rg = 600,
VOUT = 0.775Vrms (0dBm)
60
dB
Pin(4) control voltage
Pin(1) control voltage
VSB
V (mute)
Standby off
(poweron)
Muteon
(poweroff)
2.5
VCC
V
1.0 2.0
V
7
2006-04-28

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]