TA8220HQ Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
TA8220HQ Datasheet PDF : 15 Pages
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Peak input voltage (0.2s)
DC supply voltage
Operating supply voltage
Output current (peak)
Power dissipation
Operating temperature
Storage temperature
Symbol
Rating
Unit
VCC (surge)
50
V
VCC (DC)
25
V
VCC (opr)
18
V
IO (peak)
9
A
PD
50
W
Topr
−30~85
°C
Tstg
−55~150
°C
TA8220HQ
Electrical Characteristics
(unless otherwise specified, VCC = 13.2V, RL = 4Ω, f = 1kHz, Ta = 25°C)
Characteristic
Quiescent supply current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Input resistance
Output offset voltage
Current at stand−by state
Cross talk
Symbol
ICCQ
POUT (1)
POUT (2)
POUT (3)
THD
GV
∆GV
VNO
R.R.
RIN
Voffset
ISB
C.T.
Test
Cir−
Test Condition
cuit
— VIN = 0
—
VCC = 14.4V, RL = 2Ω,
THD = 10%
— RL = 2Ω, THD = 10%
— THD = 10%
— POUT = 1W
—
—
— Rg = 0Ω, BW = 20Hz~20kHz
— fripple = 100Hz, Rg = 600Ω
—
— VIN = 0
—
—
Rg = 600Ω, VOUT = 0.775Vrms
(0dBm)
Min. Typ. Max. Unit
— 120
—
30
17
26
16
19
— 0.04
48
50
−1.0
0
—
0.3
40
54
—
30
−100 0
—
1
—
60
250 mA
—
—
W
—
0.4
%
52
dB
1.0
dB
0.7 mVrms
—
dB
—
kΩ
100 mV
10
µA
—
dB
(4)pin control voltage
VSB
—
Stand−by→off
(power→on)
2.5
—
VCC
V
(1)pin (clip DET) saturation
voltage
Vsat (1)
— IC = 1mA
—
100
—
mV
(9)pin (short DET)
saturation voltage
Vsat (9)
— IC = 1mA
—
100
—
mV
7
2006-04-28
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